Strontium Bismuth Tantalate Ceramic

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Strontium bismuth tantalate ceramic.

Strontium bismuth tantalate strontium bismuth tantalum oxide sbt is a ferroelectric ceramic for dielectric applications in electronics and other advanced technologies. Microanalysis of pb zr ti w li o 3 piezoeceramic p 1173. Using bitao 4 as the precursor ferroelectric strontium bismuth tantalate srbi 2 ta 2 o 9 was successfully synthesized. Synthesis and characterisation of oxide ions conductors with the apatite structure for intermediate temperature sofc p 1177.

Strontium bismuth tantalate sbt thin films containing sr defect and bi excess have been prepared by chemical solution deposition onto spontaneously oxidized si 100 substrates with two different heterostructure electrodes. American elements can produce strontium bismuth tantalate in various compositions based on customer needs. These films however have a critical problem. Sr deficient and bi excess sbt sr 0 8 bi 2 2 ta 2 o 9 s 0 8 b 2 2 t ceramic samples were prepared by a conventional ceramic technique.

The piezoelectric properties of strontium bismuth tantalate srbi 2 ta 2 o 9 sbt ceramics were enhanced by introducing off stoichiometry into the starting materials. Development of advanced low temperature co fired ceramics ltcc. Gonzalez tantalum penta glycolate sol as a precursor of strontium bismuth tantalate ferroelectric thin films journal of the american ceramic society 88 10 2702 2005. Strontium bismuth tantalate sbt ferroelectric thin films have attracted considerable attention for the de velopment of non volatile ferroelectric random access memories nv frams.

A high processing temperature 700oc is required for the crystallization of the perovskite phase. Heating the mixtures of bitao 4 and srco 3 at 800 c resulted in the entire formation of a single phase srbi 2 ta 2 o 9 the formation process of this compound was verified to be a direct reaction occurring between the reactants without the presence of intermediates. Layered perovskite sbt films were crystallized in oxygen by rapid thermal processing at 973 k for 1 h with an intermediate treatment at 823 k for 2 h.